Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2Based RRAM Devices

Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity cha...

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/S...

Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-theart RRAM device performances, characterization, and modeling techniques are summarized, and the design conside...

Light-activated resistance switching in SiOx RRAM devices

In Situ Biasing TEM Characterization of Resistive Switching Phenomena in TiO2-based RRAM

Oxygen vacancy motion and agglomeration into Magnéli phases are often associated with resistive switching in TiO2 [1-2]. However, the defect distribution and changes of device resistance are still poorly linked and require direct analysis. Extensive ex situ analysis has lead to proposed switching mechanisms that invoke defect formation/motion, but direct observation of defect evolution is still...